Publications
Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror. Photonics. 10:646.
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2023. Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes. Applied Physics Letters. 123:091103.
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2023.